Advances in nanodevices and nanofabrication : selected - download pdf or read online

By Qing Zhang, W. I. Milne

A number of units at nanometer/molecular scale for digital, photonic, optoelectronic, organic, and mechanical purposes were created in the course of the swift improvement of fabrics and fabrication expertise. additional improvement of nanodevices strongly will depend on the cutting-edge wisdom of technological know-how and know-how on the sub-100 nm scale. This ebook offers and highlights many of the key advances on, yet now not constrained to, digital and optoelectronic units of nanometer/molecular scale, nanomechanics and nanoelectromechanical structures, electromechanical coupled units, manipulation and aligning strategies at nanometer/molecular scale, quantum phenomena, modeling of nanodevices and nanostructures, fabrication and estate characterization of nanodevices, and nanofabrication with centred beam know-how.

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Extra resources for Advances in nanodevices and nanofabrication : selected publications from Symposium of Nanodevices and Nanofabrication in ICMAT2011

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736–739, 2006. [64] X. M. , “Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography,” Nano Letters, vol. 5, pp. 745–748, 2005. [65] S. , “Fabrication of metallic nanodots in large-area arrays by Mold-to-Mold Cross Imprinting (MTMCI),” Nano Letters, vol. 5, pp. 2557–2562, 2005. [66] M. , “Growth of native oxide on a silicon surface,” Journal of Applied Physics, vol. 68, pp. 1272–1281, 1990. [67] E. Kooi and J. A. Appels, “Selective oxidation of Silicon and its device applications,” pp.

3636–3639, 2008. [72] K. R. Williams and R. S. Muller, “Etch rates for micromachining processing,” Journal of Microelectromechanical Systems, vol. 5, pp. 256–269, 1996. [73] J. M. , “Surface micromachining for microelectromechanical systems,” Proceedings of the IEEE, vol. 86, pp. 1552–1573, 1998. [74] E. Herr and H. Baltes, “KOH etching of high-index crystal planes in silicon,” Sensors and Actuators: A. Physical, vol. 31, pp. 283–287, 1992. Y. Moh, Y. Maruyama, C. Shen, G. M. D. Tong, C. R. M. , “IC Compatible Top Down Process for Silicon Nanowire FET Arrays with Three {100} Surfaces for (Bio)chemical Sensing,” Proceedings of TRANSDUCERS’11, 2011.

Top-Down Approaches alternative way by using FIB lithography to fabricate Niobium (Nb) superconducting NWs. However, this type of patterning (E-beam and FIB) is very slow, time consuming and expensive compared with conventional optical lithography. It is believed that conventional optical lithography in combination with a size reduction strategy may provide a simple and economic solution to realize SiNWs for commercial devices [13, 50, 56, 57]. In a recent publication, a new maskless method of patterning using beam lithography emerged.

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